ISSN 1011-6559 (from 1982 to 2018) | ISSN 2707-6806 (print) ISSN 2707-6792 (online)
Abbreviated key-title: Optoelektron. napìvprovìd. teh.
V. 53 (2018) | to Ukrainian version
Academician O.E. Belyaev, Director of V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine.
V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine - 58 years in the National Academy of Science of Ukraine
Optoelectron. Semicond. Tech. 53, 5-12 (2018) (PDF)
V.P. Kostylyov, A.V. Sachenko
Semiconductor photovoltaics: сurrent state and actual directions of research
Optoelectron. Semicond. Tech. 53, 13-37 (2018)
V.I. Chegel, A.M. Lopatynskyi
Molecular plasmonics – a novel research field in materials science and sensing. Applications and theoretical background (review)
Optoelectron. Semicond. Tech. 53, 38-59 (2018)
A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko
InAs photodiodes (Review. Part IV)
Optoelectron. Semicond. Tech. 53, 60-82 (2018)
L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok
Preparation and characterization of АІ-VІІІВVІ semiconductor films and the functional structures based on them: features and capabilities of the CVD method using dithiocarbamates
Optoelectron. Semicond. Tech. 53, 83 - 123 (2018)
L.O. Revutska, Z.L. Denisova, A.V. Stronski
Application of spin-coated chalcogenide films: manufacturing, properties, applicationS (review)
Optoelectron. Semicond. Tech. 53, 124-139 (2018)
V.Morozhenko
Transmission, reflection and thermal radiation of magneto-optical resonator structures in the infrared spectral range: research and application (review)
Optoelectron. Semicond. Tech. 53, 140-160 (2018)
V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin
Optoelectronic neflometric meter of the atmospheric environment meteoparameters
Optoelectron. Semicond. Tech. 53, 161-168 (2018)
K.V. Michailovska, В.А. Dan’ko, O.Y. Gudymenko, V.P. Klad’ko, I.Z. Indutnyi, P.E. Shepeliavyi, M.V. Sopinskyy
Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers
Optoelectron. Semicond. Tech. 53, 169-180 (2018)
V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, S.G. Nedilko, V.P. Scherbatsky, D.V. Gnatyuk, V.V. Borshch, M.P. Kisselyuk
The mechanisms of the appearance of visible parasitic luminescence in the ultraviolet LED’s 365 nm
Optoelectron. Semicond. Tech. 53, 181-187 (2018)
V.P. Maslov, A.V. Sukach, V.V. Tetyorkin, M.Yu. Kravetskii, N.V. Kachur, Ye.F. Venger, A.T. Voroschenko, I.G. Lutsishin, I.M. Matiyuk, A.V. Fedorenko
Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
Optoelectron. Semicond. Tech. 53, 188-198 (2018)
Ya.M. Olikh, M.D. Tymochko, M.I. Ilashchuk
Relaxation factors of acoustic conductivity in CdTe
Optoelectron. Semicond. Tech. 53, 199-212 (2018)
K.S. Dremliuzhenko, O.A. Kapush, S.D. Boruk,* D.V. Korbutyak
Properties of highly dispersed cadmium telluride systems obtained by electrospray method
Optoelectron. Semicond. Tech. 53, 213-219 (2018)
K.V. Kostyukevych, Yu.M. Shirshov, R.V. Khristosenko, A.V. Samoylov, Yu.V. Ushenin, S.A.Kostyukevych, A.A. Koptiukh
Angular spectrum peculiarities of surface plasmon-polariton resonance under investigation of latex water suspension in the Kretschmann geometry
Optoelectron. Semicond. Tech. 53, 220-239 (2018)
A. Meshalkin, A.P. Paiuk, L.A. Revutska, E. Achimova, A.V. Stronski, A. Prisakar, G. Triduh, V. Abashkin, A. Korchevoy, V.Yu. Goroneskul
Direct surface-relief grating recording using selenium layers
Optoelectron. Semicond. Tech. 53, 240-247 (2018)
V.F. Onyshchenko, M.I. Karas’
Relaxation of photoconductivity in macroporous silicon
Optoelectron. Semicond. Tech. 53, 248-253 (2018)
G.PMalanych, V.M. Tomashik
Formation of polished surface of PbTe and Pb1-xSnxTe semiconductor plates PbTe и Pb1–xSnxTe
Optoelectron. Semicond. Tech. 53, 254-260 (2018)
G.V. Dorozinsky, H.V. Dorozinska, V.P. Maslov
Features of refractometric characteristics of surface plasmon resonance of motor oils for use
Optoelectron. Semicond. Tech. 53, 261-267 (2018)
N.I. Karas, V.F. Onyshchenko
Monopolar photoconductivity of the inversion layer and “slow”-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting
Optoelectron. Semicond. Tech. 53, 268-272 (2018)
I.E. Matyash, I.A. Minaіlova, O.N. Mishchuk, B.K. Serdega
Component analysis of phonon spectra dychroidism in uniaxially deformed silicon crystal
Optoelectron. Semicond. Tech. 53, 273-281 (2018)
Information for authors of «Optoelectronics and Semiconductor Technics»
282-283 (PDF)
Contents 284 (PDF)
