CONTENTS

Academician O.E. Belyaev, Director of V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine.

V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine - 58 years in the National Academy of Science of Ukraine

Optoelectron. Semicond. Tech. 53, 5-12 (2018) (PDF)

V.P. Kostylyov, A.V. Sachenko

Semiconductor photovoltaics: сurrent state and actual directions of research

Optoelectron. Semicond. Tech. 53, 13-37 (2018)

V.I. Chegel, A.M. Lopatynskyi

Molecular plasmonics – a novel research field in materials science and sensing. Applications and theoretical background (review)

Optoelectron. Semicond. Tech. 53, 38-59 (2018)

A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko

InAs photodiodes (Review. Part IV)

Optoelectron. Semicond. Tech. 53, 60-82 (2018)

L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok

Preparation and characterization of А^І-VІІІВ^VІ semiconductor films and the functional structures based on them: features and capabilities of the CVD method using dithiocarbamates

Optoelectron. Semicond. Tech. 53, 83 - 123 (2018)

L.O. Revutska, Z.L. Denisova, A.V. Stronski

Application of spin-coated chalcogenide films: manufacturing, properties, applicationS (review)

Optoelectron. Semicond. Tech. 53, 124-139 (2018)

V.Morozhenko

Transmission, reflection and thermal radiation of magneto-optical resonator structures in the infrared spectral range: research and application (review)

Optoelectron. Semicond. Tech. 53, 140-160 (2018)

V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin

Optoelectronic neflometric meter of the atmospheric environment meteoparameters

Optoelectron. Semicond. Tech. 53, 161-168 (2018)

K.V. Michailovska, В.А. Dan’ko, O.Y. Gudymenko, V.P. Klad’ko, I.Z. Indutnyi, P.E. Shepeliavyi, M.V. Sopinskyy

Photoluminescence properties of silicon nanoparticlesinmultilayered (SiO_x-SiO_y)_n structures with porousinsulatinglayers

Optoelectron. Semicond. Tech. 53, 169-180 (2018)

V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, S.G. Nedilko, V.P. Scherbatsky, D.V. Gnatyuk, V.V. Borshch, M.P. Kisselyuk

The mechanisms of the appearance of visible parasitic luminescence in the ultraviolet LED’s 365 nm

Optoelectron. Semicond. Tech. 53, 181-187 (2018)

V.P. Maslov, A.V. Sukach, V.V. Tetyorkin, M.Yu. Kravetskii, N.V. Kachur, Ye.F. Venger, A.T. Voroschenko, I.G. Lutsishin, I.M. Matiyuk, A.V. Fedorenko

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes

Optoelectron. Semicond. Tech. 53, 188-198 (2018)

Ya.M. Olikh, M.D. Tymochko, M.I. Ilashchuk

Relaxation factors of acoustic conductivity in CdTe

Optoelectron. Semicond. Tech. 53, 199-212 (2018)

K.S. Dremliuzhenko, O.A. Kapush, S.D. Boruk,* D.V. Korbutyak

Properties of highly dispersed cadmium telluride systems obtained by electrospray method

Optoelectron. Semicond. Tech. 53, 213-219 (2018)

K.V. Kostyukevych, Yu.M. Shirshov, R.V. Khristosenko, A.V. Samoylov, Yu.V. Ushenin, S.A.Kostyukevych, A.A. Koptiukh

Angular spectrum peculiarities of surface plasmon-polariton resonance under investigation of latex water suspension in the Kretschmann geometry

Optoelectron. Semicond. Tech. 53, 220-239 (2018)

A. Meshalkin, A.P. Paiuk, L.A. Revutska, E. Achimova, A.V. Stronski, A. Prisakar, G. Triduh, V. Abashkin, A. Korchevoy, V.Yu. Goroneskul

Direct surface-relief grating recording using selenium layers

Optoelectron. Semicond. Tech. 53, 240-247 (2018)

V.F. Onyshchenko, M.I. Karas’

Relaxation of photoconductivity in macroporous silicon

Optoelectron. Semicond. Tech. 53, 248-253 (2018)

G.PMalanych, V.M. Tomashik

Formation of polished surface of PbTe and Pb_1-xSn_xTe semiconductor plates PbTe и Pb_1–xSn_xTe

Optoelectron. Semicond. Tech. 53, 254-260 (2018)

G.V. Dorozinsky, H.V. Dorozinska, V.P. Maslov

Features of refractometric characteristics of surface plasmon resonance of motor oils for use

Optoelectron. Semicond. Tech. 53, 261-267 (2018)

N.I. Karas, V.F. Onyshchenko

Monopolar photoconductivity of the inversion layer and “slow”-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting

Optoelectron. Semicond. Tech. 53, 268-272 (2018)

I.E. Matyash, I.A. Minaіlova, O.N. Mishchuk, B.K. Serdega

Component analysis of phonon spectra dychroidism in uniaxially deformed silicon crystal

Optoelectron. Semicond. Tech. 53, 273-281 (2018)

Information for authors of «Optoelectronics and Semiconductor Technics»

282-283 (PDF)

Contents 284 (PDF)