Academician O.E. Belyaev, Director of V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine.
V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine - 58 years in the National Academy of Science of Ukraine
Optoelectron. Semicond. Tech. 53, 5-12 (2018) (PDF)
V.P. Kostylyov, A.V. Sachenko
Semiconductor photovoltaics: сurrent state and actual directions of research
Optoelektron. napìvprovìd. teh. 53, 13-37 (2018)
V.I. Chegel, A.M. Lopatynskyi
Molecular plasmonics – a novel research field in materials science and sensing. Applications and theoretical background (review)
Optoelektron. napìvprovìd. teh. 53, 38-59 (2018)
A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko
InAs photodiodes (Review. Part IV)
Optoelektron. napìvprovìd. teh. 53, 60-82 (2018)
L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok
Preparation and characterization of АІ-VІІІВVІ semiconductor films and the functional structures based on them: features and capabilities of the CVD method using dithiocarbamates
Optoelektron. napìvprovìd. teh. 53, 83 - 123 (2018)
L.O. Revutska, Z.L. Denisova, A.V. Stronski
Application of spin-coated chalcogenide films: manufacturing, properties, applicationS (review)
Optoelektron. napìvprovìd. teh. 53, 124-139 (2018)
V.Morozhenko
Transmission, reflection and thermal radiation of magneto-optical resonator structures in the infrared spectral range: research and application (review)
Optoelektron. napìvprovìd. teh. 53, 140-160 (2018)
V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin
Optoelectronic neflometric meter of the atmospheric environment meteoparameters
Optoelektron. napìvprovìd. teh. 53, 161-168 (2018)
K.V. Michailovska, В.А. Dan’ko, O.Y. Gudymenko, V.P. Klad’ko, I.Z. Indutnyi, P.E. Shepeliavyi, M.V. Sopinskyy
Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers
Optoelektron. napìvprovìd. teh. 53, 169-180 (2018)
V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, S.G. Nedilko, V.P. Scherbatsky, D.V. Gnatyuk, V.V. Borshch, M.P. Kisselyuk
The mechanisms of the appearance of visible parasitic luminescence in the ultraviolet LED’s 365 nm
Optoelektron. napìvprovìd. teh. 53, 181-187 (2018)
V.P. Maslov, A.V. Sukach, V.V. Tetyorkin, M.Yu. Kravetskii, N.V. Kachur, Ye.F. Venger, A.T. Voroschenko, I.G. Lutsishin, I.M. Matiyuk, A.V. Fedorenko
Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
Optoelektron. napìvprovìd. teh. 53, 188-198 (2018)
Ya.M. Olikh, M.D. Tymochko, M.I. Ilashchuk
Relaxation factors of acoustic conductivity in CdTe
Optoelektron. napìvprovìd. teh. 53, 199-212 (2018)
K.S. Dremliuzhenko, O.A. Kapush, S.D. Boruk,* D.V. Korbutyak
Properties of highly dispersed cadmium telluride systems obtained by electrospray method
Optoelektron. napìvprovìd. teh. 53, 213-219 (2018)
K.V. Kostyukevych, Yu.M. Shirshov, R.V. Khristosenko, A.V. Samoylov, Yu.V. Ushenin, S.A.Kostyukevych, A.A. Koptiukh
Angular spectrum peculiarities of surface plasmon-polariton resonance under investigation of latex water suspension in the Kretschmann geometry
Optoelektron. napìvprovìd. teh. 53, 220-239 (2018)
A. Meshalkin, A.P. Paiuk, L.A. Revutska, E. Achimova, A.V. Stronski, A. Prisakar, G. Triduh, V. Abashkin, A. Korchevoy, V.Yu. Goroneskul
Direct surface-relief grating recording using selenium layers
Optoelektron. napìvprovìd. teh. 53, 240-247 (2018)
V.F. Onyshchenko, M.I. Karas’
Relaxation of photoconductivity in macroporous silicon
Optoelektron. napìvprovìd. teh. 53, 248-253 (2018)
G.PMalanych, V.M. Tomashik
Formation of polished surface of PbTe and Pb1-xSnxTe semiconductor plates PbTe и Pb1–xSnxTe
Optoelektron. napìvprovìd. teh. 53, 254-260 (2018)
G.V. Dorozinsky, H.V. Dorozinska, V.P. Maslov
Features of refractometric characteristics of surface plasmon resonance of motor oils for use
Optoelektron. napìvprovìd. teh. 53, 261-267 (2018)
N.I. Karas, V.F. Onyshchenko
Monopolar photoconductivity of the inversion layer and “slow”-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting
Optoelektron. napìvprovìd. teh. 53, 268-272 (2018)
I.E. Matyash, I.A. Minaіlova, O.N. Mishchuk, B.K. Serdega
Component analysis of phonon spectra dychroidism in uniaxially deformed silicon crystal
Optoelektron. napìvprovìd. teh. 53, 273-281 (2018)
Information for authors of «Optoelectronics and Semiconductor Technics»
282-283 (PDF)
Contents 284 (PDF)