Optoelectron. Semicond. Tech. 53, 83-123 (2018)

L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok


This paper considers various aspects and directions related to development of original chemical methods for deposition of semiconductor films, as well as the CVD method for producing films from dithiocarbamate. This method was first developed at the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine. The distinctive features of this method include the capability to obtain films of binary compounds from a single precursor, as well as the opportunity to grow high-quality films in air-based atmosphere. As a result, this method is able to produce a large number of AІ-VІІI BVІ semiconductor compounds. The focus of this paper is the initial development phase associated with the search for precursors that meet technology and starting materials requirements. The technology development stages that are considered include: the synthesis of initial materials, their thermoanalysis, the study of the growth kinetics of films, deposition of films of various compounds, study of their structure, surface morphology, physical, optical, and semiconductor properties, as well as preparation of film structures based on them. This study demonstrates that polycrystalline textured films with high adhesion to substrates of various types are formed on non-orienting substrates, and highly oriented epitaxial films formed on orienting substrates. This CVD method is characterized by a relatively low (200–350 ° C) film formation temperature and high growth rates (1…20 nm/s), the film thickness ranges from 50 nm up to 10 μm, and deposition of the films is carried out in a quasi-closed volume environment with air-based atmosphere. The obtained elements include: photoconductive, fluorescent, conductive, resistor, and acoustoelectronic elements. Commercially available optoelectronic devices have been manufactured as based on the obtained photoconductive films.

Keywords: semiconductor films АІ-VІІI ВVІ , CVD-method, DTC-complex, dithiocarbamate


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Л.В. Завьялова, Г.С. Свечников, Н.Н. Рощина, Б.А. Снопок


Рассмотрены различные аспекты и направления развития разработанного впервые в ИФП НАНУ оригинального химического метода синтеза моно- и мультифазных полупроводниковых материалов – безвакуумного CVD метода получения плёнок посредством пиролиза металлокомплексов дитиокарбаматов. Его отличительными особенностями являются возможность получения плёнок бинарных соединений из одного, а не из нескольких прекурсоров, а также возможность выращивать качественные плёнки в атмосфере воздуха. Этим методом получено большой ряд полупроводниковых соединений типа АІ-VІІІВVІ . Обзор включает в себя начальный период разработки, связанный с поиском прекурсоров, удовлетворяющих требованиям, предъявляемым к технологии и исходным веществам. Рассмотрены различные этапы развития технологии: синтез исходных компонентов, их термоанализ, исследование кинетики роста плёнок, получение плёнок различных соединений, исследование их структуры, морфологии поверхности, физических, оптических, полупроводниковых свойств, а также получение плёночных структур на их основе. Показано, что на неориентирующих подложках формируются поликристаллические текстурированные плёнки с высокой адгезией к подложкам различного типа, а на ориентирующих – высокоориентированные эпитаксиальные плёнки. Для метода характерны сравнительно низкие (200-350 °С) температуры образования плёнок и высокие скорости их роста (1–20 нм/с), возможность получения плёнок в широком диапазоне толщин (от 50 нм до 10 мкм). Подробно обсуждается получение фотопроводящих, люминесцентных, проводящих и резисторных структур, акустоэлектронных элементов и других систем оптоэлектроники. Приведены примеры серийных устройств на основе плёнок, изготовленных данным методом.

Ключевые слова: полупроводниковые плёнки АІ-VІІІВVІ , CVD-метод, DTC-комплексы, дитиокарбамат.