https://doi.org/10.15407/jopt.2018.53.083

Optoelectron. Semicond. Tech. 53, 83-123 (2018)

L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok

PREPARATION AND CHARACTERIZATION OF АІ-VІІІВVІ SEMICONDUCTOR FILMS AND THE FUNCTIONAL STRUCTURES BASED ON THEM: FEATURES AND CAPABILITIES OF THE CVD METHOD USING DITHIOCARBAMATES

This paper considers various aspects and directions related to development of original chemical methods for deposition of semiconductor films, as well as the CVD method for producing films from dithiocarbamate. This method was first developed at the Institute of Semiconductor Physics, National Academy of Sciences of Ukraine. The distinctive features of this method include the capability to obtain films of binary compounds from a single precursor, as well as the opportunity to grow high-quality films in air-based atmosphere. As a result, this method is able to produce a large number of AІ-VІІI BVІ semiconductor compounds. The focus of this paper is the initial development phase associated with the search for precursors that meet technology and starting materials requirements. The technology development stages that are considered include: the synthesis of initial materials, their thermoanalysis, the study of the growth kinetics of films, deposition of films of various compounds, study of their structure, surface morphology, physical, optical, and semiconductor properties, as well as preparation of film structures based on them. This study demonstrates that polycrystalline textured films with high adhesion to substrates of various types are formed on non-orienting substrates, and highly oriented epitaxial films formed on orienting substrates. This CVD method is characterized by a relatively low (200–350 ° C) film formation temperature and high growth rates (1…20 nm/s), the film thickness ranges from 50 nm up to 10 μm, and deposition of the films is carried out in a quasi-closed volume environment with air-based atmosphere. The obtained elements include: photoconductive, fluorescent, conductive, resistor, and acoustoelectronic elements. Commercially available optoelectronic devices have been manufactured as based on the obtained photoconductive films.

Keywords: semiconductor films АІ-VІІI ВVІ , CVD-method, DTC-complex, dithiocarbamate