CONTENTS

A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko

InSb photodiodes (Review. Part 5 III)

Optoelectron. Semicond. Tech. 52, 5-36 (2017)

G.V. Dorozinsky, О.М. Lyapin, H.V. Dorozinska, V.P. Maslov

State-of-the art and problems in developing sеnsor elements of devices basеd on surface plasmon resonance phenomenon (Review)

Optoelectron. Semicond. Tech. 52, 37-49 (2017)

R.A. Red’ko, N.D. Vakhnyak, O.P. Lotsko, G.V. Milenin, V.V. Milenin, S.M. Redko

Influence of microwave radiation treatment on photoluminescent properties of II-VI compounds (Review)

Optoelectron. Semicond. Tech. 52, 50-69 (2017)

V.N. Borschov, A.M. Listratenko, I.T. Tymchuk, G.I. Nikitskiy, A.A. Fomin, L.A. Nazarenko, V.M. Sorokin, A.V. Rybalochka, D.A. Kalustova, D.V. Pekur

High-efficient voluminous led modules in super-high-power lamps for domestic and industrial applications

Optoelectron. Semicond. Tech. 52, 70-80 (2017)

A.T. Voroshchenko, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko, M.Yu. Kravetskii, I.G. Lutsishin

Peculiarities of preparation of CdTe p-n junctions and carrier transport in them

Optoelectron. Semicond. Tech. 52, 81-90 (2017)

Viktor Dan’ko, Ivan Indutnyi, Yuriy Ushenin, Victor Myn’ko, Dirk Hegemann, Marianne Vandenbossche, Petro Shepeliavyi, Mariia Lukaniuk, Petro Lytvyn, Roman Khrystosenko

Investigation of the sensitivity inherent to sensor Au chips with nanostructured surface

Optoelectron. Semicond. Tech. 52, 91-99 (2017)

K.V. Michailovska, V.I. Mynko, I.Z. Indutnyi, P.E. Shepeliavyi

The influence of the periodic relief of the silicon substrate on polarization of photoluminescence observed in nc-Si–SiOx nanostructures

Optoelectron. Semicond. Tech. 52, 100-107 (2017)

Ya.M. Olikh, M.D. Tymochko, N.V. Safriuk, M.I. Ilashchuk, O.Ya. Olikh

Іnvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals

Optoelectron. Semicond. Tech. 52, 108-122 (2017)

V.F. Onyshchenko, M.I. Karas’

Calculation of photoconductivity spectra in silicon with surfaces structured with macropores

Optoelectron. Semicond. Tech. 52, 123-127 (2017)

G.P. Gaidar, P.I. Baranskii

Experimental evidence of invariability in the shape of n-Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains

Optoelectron. Semicond. Tech. 52, 128-134 (2017)

N.I. Karas’, V.F. Onyshchenko, D.A. Kalustova, V.I. Cornaga

“Slow” surface levels and relaxation of photoconductivity in the structures of macroporous silicon in the violet range of the optical spectrum

Optoelectron. Semicond. Tech. 52, 135-140 (2017)

Yu.V. Goltvyanskyi, O. J. Gudymenko, O.V. Dubikovskyi, O.I. Liubchenko, O.S. Oberemok, T.M. Sabov, S.V. Sapon, K.I. Chunikhina

Investigation of photodiode formation processes in insb by using beryllium ion implantation

Optoelectron. Semicond. Tech. 52, 141-150 (2017)

In memory of Academician of NAS of Ukraine S.V. Svechnikov

Optoelectron. Semicond. Tech. 52, 151 (2017)