https://doi.org/10.15407/jopt.2017.52.100

Optoelectron. Semicond. Tech. 52, 100-107 (2017)

K.V. Michailovska, V.I. Mynko, I.Z. Indutnyi, P.E. Shepeliavyi

THE INFLUENCE OF THE PERIODIC RELIEF OF THE SILICON SUBSTRATE ON POLARIZATION OF PHOTOLUMINESCENCE OBSERVED IN nc-Si–SiOx NANOSTRUCTURES

The investigation of the spectral and polarization characteristics of photoluminescence (PL) of porous light-emitting nc-Si–SiOx nanostructures formed on the patterned c-Si plates with a relief surface in the form of diffraction grating with trapezoidal and triangular groove profiles were performed. Interferential lithography with vacuum chalcogenide photoresist and anisotropic wet etching were used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si–SiOx structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. It was found that the yield of PL from the nc-Si– SiOx structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on polarization of the exciting light. The measured reflection spectra of nc-Si–SiOx structure on the patterned c-Si substrate have confirmed influence of the pattern on the fraction of polarized emission from nc-Si–SiOx.

Keywords: silicon nanostructure, photoluminescence, polarization memory effect