https://doi.org/10.15407/jopt.2016.51.128

Optoelectron. Semicond. Tech. 51, 128-134 (2016)

P.I. Baranskii, G.P. Gaidar

MAGNETOTENSO- AND TENSOMAGNETORESISTANCE OF n-Ge

In n-Ge crystals at 77 K in the conditions X r || J r || H r ||[111], the longitudinal magnetotensoresistance depending on the value of magnetic field H has been investigated for different values of uniaxial stress caused by mechanical compression X, as well as the longitudinal tensomagnetoresistance depending on X has been studied at different values of H. Proposed has been the practically important method for determining the tensomagnetoresistance in conditions of extremely high H and X by using measurements of only tensoresistance (i.e., at Н = 0) in a wide range of X.

Keywords: germanium, magnetotensoresistance, tensomagnetoresistance, anisotropy parameter of mobility.