journal-opt - abstr150-157

https://doi.org/10.15407/jopt.2016.51.150

Optoelectron. Semicond. Tech. 51, 150-157 (2016)

T.V. Semikina

DIODE STRUCTURES AND ELECTRICAL PROPERTIES OF ZnO FILMS GROWN USING THE ATOMIC LAYER DEPOSITION METHOD

Technological regimes for growing ZnO films with the carrier concentrations 1016…1017 cm–3 by using atomic layer deposition method (ALD) have been studied and developed. The dependences of electron concentration on the technological regimes have been analyzed. Demonstrated have been ALD method capabilities for preparing the structures with semiconductor ZnO films and organic materials as well as ALD advantages for application in transparent electronics. The results of creation of homo- and heterojunctions based on the obtained semiconductor ZnO films have been presented. The rectifying properties of the studied p-n junctions demonstrate their perspectives for application in transparent electronics.

Keywords: atomic layer deposition, semiconductor ZnO films, homo- and heterojunctions.

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References

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Т.В. Семикина

ДИОДНЫЕ СТРУКТУРЫ И ЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ПЛЕНОК ZnO, ПОЛУЧЕННЫХ МЕТОДОМ АТОМНОГО ПОСЛОЙНОГО ОСАЖДЕНИЯ

Разработаны и представлены технологические режимы, позволяющие получать ZnO пленки с концентрацией носителей порядка 1016–1017см–3 методом атомного послойного осаждения (АПО). Проанализированы зависимости концентрации электронов от технологических режимов. Показаны возможности технологии АПО для получения структур с полупроводниковыми ZnO пленками и органическими материалами, а также преимущества использования АПО в прозрачной электронике. Приведен обзор результатов создания гомо- и гетеропереходов на основе полученных полупроводниковых пленок ZnO. Выпрямляющие свойства исследованных p-n переходов демонстрируют перспективы их применения в прозрачной электронике.

Ключевые слова: атомное послойное осаждение, полупроводниковые ZnO пленки, гомо- и гетеропереходы.

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