https://doi.org/10.15407/jopt.2016.51.031

Optoelectron. Semicond. Tech. 51, 31-42 (2016)

A.I. Vlasenko, V.P. Veleschuk, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, V.V. Borshch

NON-DESTRUCTIVE CONTROL AND DIAGNOSTICS OF LED GaN STRUCTURES BY USING MICROPLASMAS (REVIEW)

Results of researching the controlled microplasma breakdown in the LED InGaN/GaN heterostructures and various GaN, GaAs, GaP, SiC, Si, ZnO structures have been generalized. It has been ascertained that parameters of the microplasmas in LEDs are directly related with their functional parameters. It has been shown that non-destructive express control and diagnostics of power InGaN/GaN LEDs are possible when being based on the luminescent and electric parameters of microplasmas. The electroluminescence spectra of the microplasmas have been researched and the sources of microplasmas in the InGaN/GaN heterostructures have been determined.

Keywods: LED, InGaN/GaN, microplasma, diagnostics.

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В.П. Велещук, О.І. Власенко, З.К. Власенко, Д.М. Хміль, О.М. Камуз, В.В. Борщ1

НЕРУЙНІВНИЙ КОНТРОЛЬ ТА ДІАГНОСТИКА СВІТЛОДІОДНИХ СТРУКТУР НА ОСНОВІ GаN ЗА МІКРОПЛАЗМАМИ (ОГЛЯД)

Узагальнено матеріал з дослідження мікроплазмового контрольованого пробою в InGaN/GaN гетероструктурах світлодіодів та в різноманітних GaN, GaAs, GaP, SiC, Si, ZnO структурах. Установлено, що характеристики мікроплазм світлодіодних структур прямо пов’язані з їх функціональними параметрами. Показано, що за люмінесцентними та електричними характеристиками мікроплазм можливі експресний неруйнівний контроль та діагностика ІnGaN/GaN потужних світлодіодів. Досліджено спектри електролюмінесценції мікроплазм та встановлено джерела мікроплазм в ІnGaN/GaN гетероструктурах.

Ключові слова: світлодіод, InGaN/GaN, мікроплазми, діагностика.