journal-opt - abstr60-82

https://doi.org/10.15407/jopt.2018.53.060

Optoelectron. Semicond. Tech. 53, 60-82 (2018)

A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko

InAs PHOTODIODES (REVIEW. PART IV)

The main types of noise in infrared photodiodes based on InSb and InAs are analyzed. Experimental and theoretical studies of noise in IR photodiodes are necessary for realization of their threshold parameters, prediction of degradation of parameters and characteristics of the photodetector, possible failures, stability and durability. The present state of experimental and theoretical studies of thermal, ірще, generation-recombination and radiation noise in photodiodes is considered. Particular attention is paid to the results of research of low-frequency noise of 1/f type. A correlation between the magnitude of 1/f noise and tunneling current in InSb and InAs photodiodes is established. Experimental results are discussed within the framework of the inhomogeneous p-n junction model. The model assumes that the tunneling current flows through the regions with high defects concentration, which differs significantly from the average one. Tunneling in these regions occurs via local levels at the middle of the bandgap. The proposed model of 1/f noise is based on the experimentally established fact of the presence of two conduction paths in InAs and InSb p-n junctions, caused by dislocations crossing the depletion region. This results in fluctuations of the junction resistance, which may be regarded as a main reason for appearance of 1/f noise in InSb and InAs photodiodes. The calculations of low-frequency noise using existing theoretical models are carried out. It is shown that the threshold parameters of diffusion photodiodes on InSb are critically dependent on the structural and electrical homogeneity of the n-region of 80 the junction. It is pointed out that identification of tunneling mechanisms in InSb p-n junctions requires additional research. It is obvious that the basic assumption in the existing theoretical models of the uniform distribution of defects needed to obtain analytical expressions for direct and reverse current-voltage characteristics does not correspond to the real distribution of defects in InSb and InAs, made by conventional methods of diffusion and implantation. The threshold parameters of infrared photodiodes (sensitivity, detectivity, dynamic resistance-area product) are analyzed.

Key words: InSb photodiode, 1/f noise, tunnel current, inhomogeneous p-n junction.

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А.В. Сукач, В.В. Тетьоркін, А.І. Ткачук1, С.П. Троценко

InAs ФОТОДІОДИ (ОГЛЯД. ЧАСТИНА IV)

Проаналізовано основні види шуму в інфрачервоних фотодіодах на основі InSb та InAs. Розглянуто сучасний стан експериментальних та теоретичних досліджень теплового, дробового, генераційнорекомбінаційного та радіаційного шуму у фотодіодах. Особлива увага приділена результатам досліджень низькочастотного шуму 1/f типу. Встановлено кореляцію між величиною 1/f шуму та генераційно-тунельним механізмом протікання темнового струму у фотодіодах. Експериментальні результати обговорюються в рамках моделі неоднорідного переходу. Показано, що основною причиною виникнення 1/f шуму в InSb та InAs фотодіодах можуть бути флуктуації опору, зумовлені наявністю двох каналів провідності в області просторового заряду. Виконано розрахунки низькочастотного шуму з використанням існуючих теоретичних моделей.

Ключові слова: InSb фотодіод, 1/f шум, тунельний струм, неоднорідний p-n перехід.

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