https://doi.org/10.15407/jopt.2016.51.158

Optoelectron. Semicond. Tech. 51, 158-162 (2016)

V.F. Onyshchenko

DISTRIBUTION OF PHOTOCARRIERS IN MACROPOROUS SILICON IN CASE OF THE SPATIALLY INHOMOGENEOUS GENERATION OF CHARGE CARRIERS

The numerical calculation of the photohole distribution in macroporous silicon when exposing to light with the wavelengths 0.95, 1.05 µm has been performed. The calculation has been performed for macroporous silicon with various depths of macropores and various thicknesses of the single-crystal substrates. It has been shown that there are two maxima in the distribution of photocarriers in macroporous silicon if it is exposed to light with the wavelength 0.95 µm. The first maximum of photohole distribution in macroporous silicon is located in the macroporous layer, the second maximum – in the single-crystal substrate. It has been also shown that there is one maximum in the photocarrier distribution in macroporous silicon that are located in the single-crystal substrate when exposing to light with the wavelength 1.05 µm.

Keywords: macroporous silicon, spatially inhomogeneous generation, photocarriers, excess minority carriers.