journal-opt - abstr69-90

https://doi.org/10.15407/jopt.2016.51.069

Optoelectron. Semicond. Tech. 51, 69-90 (2016)

A.V. Sukach, V.V. Tetyorkin, I.M. Matiyuk, A.I. Tkachuk

InSb Photodiodes (Review, Part II)

Analyzed have been the most important technological operations used for preparing the diffusion InSb photodiodes, namely: chemical-mechanical and chemical-dynamic polishing the surface of substrates, passivation of photodiode active area and methods of its realization, diffusion of cadmium as an acceptor impurity. The methods of manufacturing the diffusion InSb p-n junctions, in which the total dark current is determined by summing the generation-recombination and diffusion components have been described in details. The published data on manufacturing technology of InSb photodiodes have been generalized.

Keywords: InSb photodiode, passivation, chemical etching, sulphidation, cadmium diffusion.

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А.В. Сукач, В.В. Тетьоркін, І.М. Матіюк, А.І. Ткачук1

InSb ФОТОДІОДИ (ОГЛЯД. ЧАСТИНА II)

Проаналізовано найбільш важливі технологічні операції виготовлення дифузійних InSb фотодіодів – хіміко-механічне та хіміко-динамічне полірування поверхні підкладок, пасивацію активної області фотодіодів та способи її реалізації, дифузію акцепторної домішки кадмію. Детально описано способи виготовлення дифузійних InSb p-n-переходів, у яких загальний темновий струм визначається сумою генераційно-рекомбінаційної та дифузійної складових. Узагальнено літературні дані з технології виготовлення InSb фотодіодів.

Ключові слова: InSb фотодіод, пасивація, хімічне травлення, сульфідування, дифузія кадмію.

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