ISSN 1011-6559 (from 1982 to 2018) | ISSN 2707-6806 (print) ISSN 2707-6792 (online)
Abbreviated key-title: Optoelektron. napìvprovìd. teh.
https://doi.org/10.15407/jopt / https://doi.org/10.15407/iopt
A.V. Samoylov
Trends in the development of sensor devices based on surface plasmon resonance (Review)
Optoelectron. Semicond. Tech. 56, 5-26 (2021)
D.V. Korbutyak, I.M. Kupchak
Surface luminescence of A2B6 semiconductor quantum dots (Review)
Optoelectron. Semicond. Tech. 56, 27-38 (2021)
I.V. Pekur, V.M. Sorokin, D.V. Pekur.
Solar batteries as an element of design of modern energy efficient buildings
Optoelectron. Semicond. Tech. 56, 39-49 (2021)
V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.J. Goroneskul
Optoelectronic hardware-software monomodular sensor of meteorological range of visibility and atmosphere transparency with automatic correction of external pollution effect of optical systems
Optoelectron. Semicond. Tech. 56, 50-60 (2021)
Ya.M. Olikh, M.D. Tymochko, V.P. Kladko, O.I. Liubchenko, A.E. Belyaev, V.V. Kaliuzhnyi
Significance of dx-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
Optoelectron. Semicond. Tech. 56, 61-70 (2021)
I.Z. Indutnyi, V.I. Mynko, M.V. Sopinskyy, V.A. Dan’ko, P.M. Lytvyn
Investigation of the surface plasmon-polaritons excitation efficiency on aluminum gratings, taking into account diffracted radiation
Optoelectron. Semicond. Tech. 56, 71-82 (2021)
V.P. Maslov, V. Morozhenko, N.V. Kachur
Investigation of angular and polarization characteristics of thermal radiation of one-dimensional photonic structures on a finite substrate.
Optoelectron. Semicond. Tech. 56, 83-88 (2021)
V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin
Investigation of the influence of correlated color temperature of led illuminators as a factor of safety lighting of highways for difficult weather conditions
Optoelectron. Semicond. Tech. 56, 89-96 (2021).
M.S. Zayats, V.G. Boiko, B.M. Romanyuk, P.M. Lytvyn
Low - temperature ion - plasma technology of deposition of nanostructured films of aluminum and boron nitrides
Optoelectron. Semicond. Tech. 56, 97-107 (2021).
L.V. Shekhovtsov, S.I. Kirilova
Features studies of transition layers in semiconductor heterosistems
Optoelectron. Semicond. Tech. 56, 108-114 (2021).
V.G. Boiko, M.S. Zayats
Features of selecting dielectric layers for electroluminescent structures
Optoelectron. Semicond. Tech. 56, 115-122 (2021)
G.A. Pashchenko, L.I. Trishchuk, O.A. Kapush
Photoluminescence of nanocrystalline CdTe, implemented in porous silicon
Optoelectron. Semicond. Tech. 56, 123-128 (2021)
L.V. Shekhovtsov
Diagnosis of semiconductor heterosystems using the photovoltaic method
Optoelectron. Semicond. Tech. 56, 129-133 (2021)
Yu.M. Shirshov, K.V. Kostyukevych, R.V. Khistosenko, N.Ya. Gridina, S.A. Kostyukevych, A.V. Samoylov, Yu.V. Ushenin
Optical control of the interface between gold surface and blood cell samples
Optoelectron. Semicond. Tech. 56, 134-155 (2021)
In memory of Corresponding Member of NAS OF Ukraine V.G. Litovchenko (PDF)
Optoelectron. Semicond. Tech. 56, 156-157 (2021)
In memory of Corresponding Member of NAS OF Ukraine P.F. Oleksenko (PDF)
Optoelectron. Semicond. Tech. 56, 158-159 (2021)
