CONTENTS

A.V. Samoylov

Trends in the development of sensor devices based on surface plasmon resonance (Review)

Optoelectron. Semicond. Tech. 56, 5-26 (2021)

D.V. Korbutyak, I.M. Kupchak

Surface luminescence of A₂B₆ semiconductor quantum dots (Review)

Optoelectron. Semicond. Tech. 56, 27-38 (2021)

I.V. Pekur, V.M. Sorokin, D.V. Pekur.

Solar batteries as an element of design of modern energy efficient buildings

Optoelectron. Semicond. Tech. 56, 39-49 (2021)

V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.J. Goroneskul

Optoelectronic hardware-software monomodular sensor of meteorological range of visibility and atmosphere transparency with automatic correction of external pollution effect of optical systems

Optoelectron. Semicond. Tech. 56, 50-60 (2021)

Ya.M. Olikh, M.D. Tymochko, V.P. Kladko, O.I. Liubchenko, A.E. Belyaev, V.V. Kaliuzhnyi

Significance of dx-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN

Optoelectron. Semicond. Tech. 56, 61-70 (2021)

I.Z. Indutnyi, V.I. Mynko, M.V. Sopinskyy, V.A. Dan’ko, P.M. Lytvyn

Investigation of the surface plasmon-polaritons excitation efficiency on aluminum gratings, taking into account diffracted radiation

Optoelectron. Semicond. Tech. 56, 71-82 (2021)

V.P. Maslov, V. Morozhenko, N.V. Kachur

Investigation of angular and polarization characteristics of thermal radiation of one-dimensional photonic structures on a finite substrate.

Optoelectron. Semicond. Tech. 56, 83-88 (2021)

V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin

Investigation of the influence of correlated color temperature of led illuminators as a factor of safety lighting of highways for difficult weather conditions

Optoelectron. Semicond. Tech. 56, 89-96 (2021).

M.S. Zayats, V.G. Boiko, B.M. Romanyuk, P.M. Lytvyn

Low - temperature ion - plasma technology of deposition of nanostructured films of aluminum and boron nitrides

Optoelectron. Semicond. Tech. 56, 97-107 (2021).

L.V. Shekhovtsov, S.I. Kirilova

Features studies of transition layers in semiconductor heterosistems

Optoelectron. Semicond. Tech. 56, 108-114 (2021).

V.G. Boiko, M.S. Zayats

Features of selecting dielectric layers for electroluminescent structures

Optoelectron. Semicond. Tech. 56, 115-122 (2021)

G.A. Pashchenko, L.I. Trishchuk, O.A. Kapush

Photoluminescence of nanocrystalline CdTe, implemented in porous silicon

Optoelectron. Semicond. Tech. 56, 123-128 (2021)

L.V. Shekhovtsov

Diagnosis of semiconductor heterosystems using the photovoltaic method

Optoelectron. Semicond. Tech. 56, 129-133 (2021)

Yu.M. Shirshov, K.V. Kostyukevych, R.V. Khistosenko, N.Ya. Gridina, S.A. Kostyukevych, A.V. Samoylov, Yu.V. Ushenin

Optical control of the interface between gold surface and blood cell samples

Optoelectron. Semicond. Tech. 56, 134-155 (2021)

In memory of Corresponding Member of NAS OF Ukraine V.G. Litovchenko (PDF)

Optoelectron. Semicond. Tech. 56, 156-157 (2021)

In memory of Corresponding Member of NAS OF Ukraine P.F. Oleksenko (PDF)

Optoelectron. Semicond. Tech. 56, 158-159 (2021)