https://doi.org/10.15407/jopt.2017.52.135

Optoelectron. Semicond. Tech. 52, 135-140 (2017)

N.I. Karas’, V.F. Onyshchenko, D.A. Kalustova, V.I. Cornaga

“Slow” surface levels and relaxation of photoconductivity in the structures of macroporous silicon in the violet range of the optical spectrum

Photoconductivity in the structures of macroporous silicon within the violet range of wavelengths 360-460 nm has been studied. The large relaxation time of the photoconductivity (approximately 4 min) observed in the experiment is explained by the presence of “slow” surface levels. A feature of the observed slow relaxation of the photoconductivity in the violet range as compared to that in the blue-green range of visible light is that it consists of two components: fast (approximately 1-2 s), during which approximately 80% of the photoconductivity appears, and slow (4 min), during which the photoconductivity reaches its maximum value.

Keywords: “slow” surface levels, photoconductivity relaxation, negative photoconductivity, violet region of the optical spectrum.