https://doi.org/10.15407/jopt.2017.52.081

Optoelectron. Semicond. Tech. 52, 81-90 (2017)

A.T. Voroshchenko, A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, M.Yu. Kravetskii, I.G. Lutsishin, I.M. Matiyuk

PECULIARITIES OF PREPARATION OF CdTe p-n JUNCTIONS AND CARRIER TRANSPORT IN THEM

The charge carrier transport mechanisms in CdTe p-n junctions prepared using diffusion of indium into monocrystalline substrates of p-type conductivity within the temperature range 195–298 K have been investigated. It has been ascertained that p-n junction is smoothly graded, and its structure includes a thin semi-insulating i-region. The charge carrier transport at forward biases is explained by double-injection current. At low biases, the injection of charge carriers in the i-region takes place, whereas at higher biases – the dielectric mode of relaxation of electron-hole plasma into the i-region of n-i-p junction is observed. At the direct-bias voltages U > 2 V, the current-voltage characteristic is caused by the Poole–Frenkel conductivity.

Keywords: CdTe p-n junction, charge carrier transport mechanisms.